横向电场 meaning in English
transverse electric field
Examples
- Calculation results show that 90 % carriers will populate in the first ten subbands when effective field is larger than 105v / cm
计算表明,当横向电场为105v / cm时,前十个子能带上的载流子浓度占总浓度的90 % 。 - Both the theoretical simulation and experiment results show that the relationship between eff and eeff in strained - si is similar to the one in bulk si . the mobility reaches its maximum when eeff equals to 2 105v / cm
理论分析和实验结果表明,应变硅载流子迁移率与横向电场eeff的函数关系与体硅材料类似,峰值迁移率所对应的eeff为2 105v / cm 。 - Then , a comprehensive an ~ tlyticai model for coulomb scattering in 6h - sic inversion layers is presented considering all the coulomb effects of the charged - centers near the sicisio2 interface . this model takes into account the effects of the charged - centers correlation
当有效横向电场较低时，库仑散射在sic反型层的电子输运中起主要散射作用，而当有效横向电场升高时，表面粗糙散射的作用会变得愈来愈显著。 - For strained si pmosfets , the hole mobility is not only determined by the tensity of strain , but also related to the strain types , which are uniaxial compressive strain and biaxial tensile strain . when electric field is high enough , the hole mobility will be deteriorated in pmosfets under biaxial tensile strain , however , in the case of uniaxial compressive strain , the deterioration will never occur
经模型分析发现,应变硅pmosfet空穴迁移率与应力作用方式有如下关系:当横向电场较高( > 5 105v / cm )时,双轴张应力作用下的应变硅pmosfet的空穴迁移率将发生退化,而单轴压应力器件则不会受到影响。