探针诊断 meaning in English
sounding
Examples
- A set of icpcvd system has been designed and manufactured through the analysis of the probe diagnosed results . when the output power of the rf is within 200w and the reflection power is within 0 . 6w , a good matching effect can be gained
通过对探针诊断结果的分析，调整icp装置系统，得到很好的匹配效果，在射频输出功率为200w以内时，反射功率小于0 . 6w 。 - A set of icp etching system has been designed and manufactured through the analysis of the probe diagnosed results . during the study of the system , the emphasis is laid on the matching problem of icp coupled antenna via the rf matching device and rf power source
通过对探针诊断结果的分析，设计并制作一套icp刻蚀系统，重点研究icp耦合天线通过射频匹配器与射频功率源的匹配问题，得到很好的匹配效果，在射频输出功率为500w以内时，反射功率小于10w 。 - This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film . by means of single probe and double probe , the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed . the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
利用单探针和双探针诊断30mm高反应室和50mm高反应室在各种工艺条件下的离子密度和电子温度，得到这两个参数在反应室轴向位置的空间分布、随功率和气压的变化曲线、顶盖接地和反应室体积对它们的影响，结果表明离子密度为10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ，电子温度在4 10ev之间；当顶盖接地时，该处的等离子体密度明显大于不接地；在同样条件下， 50mm高反应室内的离子密度明显大于30mm高反应室。 - This paper mainly study on the technics of preparing nano - si3n4 and icpecvd . seeking for the proper parameter and technics , crystallization of nano - si3n4 powder with muffle furnace , probe the new effective way of improving the properties of nano - si3n4 powder the ion density in the reaction chamber was diagnosed by a langmuir probe . the rules were obtained under different air pressure , different radio frequency power and different position which the ion density changes about from 1010cm - 3 to 1010cm - 3 decreasing as the pressure increases and increasing as the power decreases
利用朗缪尔探针诊断了反应室内等离子体参数，得到不同位置、不同功率和不同气压下等离子体密度的变化规律，结果表明离子密度为10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ，等离子体密度随着功率的增大而增大，随着气压的升高而减小，由于离子鞘层的存在，在一定条件下提供了局部等离子体密度稳定的区域。