异质外延生长 meaning in English
heteroepitaxial growth
Examples
- So it is an maximum challenge and difficulty to product heteroepitaxial big size high - orientation and single crystal diamond films and big area transparent diamond films in nodiamond substrate ' s surface for present diamond films " r & d
因此，目前金刚石薄膜研究面临的最大挑战和难点就是在非金刚石衬底表面异质外延生长大尺寸高取向和单晶金刚石膜以及制备大面积透明金刚石膜。 - In this thesis , the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films , that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer , then deposited the 3c - sic films on this buffer layer
本论文采用cvd方法,并结合“两步生长工艺”进行3c - sic的异质外延生长。即:首先将si基片碳化,形成一个碳化缓冲层,然后再在此缓冲层上异质外延生长3c - sic薄膜。 - In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。 - Sige - on - insulator ( sigeoi ) , which appears very recently , integrates both the advantages of soi and that of sige and thus attracts much attention for the potential applications in low voltage , low power consumption , high dense integrated circuits and optoelectronics , system on chip etc . but people are in the very beginning of the sige - oi material fabrication research . this work focuses on these three facets : 1 . sige film preparation ; 2
本论文结合以上背景，主要进行了以下几个方面的研究：一、硅基上sige材料的异质外延生长技术，以及sige薄膜的表征；二、 sige - oi的simox制备工艺研究；三、 sige - oi材料的smart - cut制备工艺研究，以及sige / si异质结结构中注入h离子的物理效应。