多晶硅栅 meaning in English

polysilicon gate

A breakdown model of thin drift region ldmos with a step doping profile
器件多晶硅栅量子效应的解析模型
In the paper , we introduced how to draw layout based on the standard of 0 . 6 m , 5v cmos given by csc semiconductor ltd and finish the work in candence
芯片版图的设计中采用了绿华半导体公司的0 . 6 m , 5vcmos工艺库,工艺基本特征为多晶硅栅,单层金属布线。
By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits , type of current density ratio compensation 、 weak inversion type and type of poly gate work function , a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper . applying the negative feedback technology , an output buffer and multiply by - 2 - circuits are designed , which improve the current driving capability
然后通过比较和分析电流密度比补偿型、弱反型工作型和多晶硅栅功函数差型三种带隙电压基准源电路结构的优缺点,确定了电流密度比补偿型共源共栅结构作为本设计核心电路结构,运用负反馈技术设计了基准输出缓冲电路、输出电压倍乘电路,改善了核心电路的带负载能力和电流驱动能力。