外延衬底 meaning in English
epitaxial body
epitaxial substrate
Examples
- Up to present we have prepared the epitaxial simox substrate ( i layer 0 . 37um , silicon layer 2 . 8um ) , and done the circuit design , process integration , device simulation and some layout design )
本项目目前已完成了simox外延衬底的制备（ i层0 . 37um ，外延硅层2 . 8um ） ，以及功率开关集成电路的电路设计，工艺设计和部分版图设计。 - It is used in solar cells and semiconductor detectors for astrophysical research , for x - ray fluorescence ( xrf ) analysis , industrial gauging , nuclear proliferation treaty verifaction et . al , and also in laser window and infrared array technology as subtriate for hg1 - xcdxte
同时它还可作为红外探测器材料碲镉汞( hgcdte )和外延衬底，以及激光窗口和太阳电池等。 - We have done the following work in this paper : 1 . proposal of a novel high - voltage soi lateral structure ( tsoi ) , and establishment of its blocking theory ; 2 . proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3
本文主要进行了三个方面的工作： 1 、提出了降场电极u形漂移区的横向高压器件结构tsoi （ trenchsoi ） ，并建立了该结构的解析理论[ 1 ] ； 2 、提出基于simox外延衬底esoi （ epitaxialsimoxsoi ）的器件结构； 3 、设计了基于simox处延衬底结构的功率开关集成电路。 - It is not only the satisfactory substrate used for the epitaxy growth of infrared detector material hgcdte , but also attractive candidates for the manufacture of high quality x - ray or y - ray detectors , photoelectronic modulator , solar cell , and laser windows etc . no matter what the crystal is used as detectors or epitaxy substrate , it is of vital importanteto obtain high quality cdznte crystals with perfect surface
它不仅是生长红外探测器材料hgcdte最理想的外延衬底，而且还被广泛用于制备高性能x射线或射线探测器、光电调制器、太阳能电池和激光窗口等。获得高性能、高质量的czt晶体是至关重要的。无论是作探测器还是作外延衬底等都要求它的表面质量要非常高，因为表面质量会直接影响到器件的性能。