外延法 meaning in English

epitaxial method
extrapolation

At higher temperature , 740 , the growth process was found to be speeded , and a more compact film was obtained
采用较为简单的热壁外延法，在420的低温下，在si衬底上生长了znse薄膜。
In light of them , matching pmosfet and nmosfet with strained si channel were designed . 2 . the epitaxy layers including lt ( low temperature ) si grow technicsare discussed
2 .研究了包括400下分子束外延法生长100nm的低温硅层的各外延层生长技术。
In this research , field emission performances from diamond film growing through epitaxy method and diamond powders coated with sliver have been studied
本文研究了外延法生长金刚石薄膜和包银金刚石颗粒的场发射特性。目的在于探索金刚石的场发射机制。
At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ) , molecule beam epitaxy ( mbe ) as well as hvpe
目前gan的外延生长技术一般采用有机金属化学气相外延法( mocvd ) ，在蓝宝石衬底的( 0001 )面上外延生长gan材料，另外还有分子束外延技术( mbe )及卤化物汽相外延技术( hvpe )等。