场畴 meaning in English
field domain
Examples
- Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s , this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
本文基于gaas等?族化合物半导体的转移电子理论，结合半绝缘gaas光电导开关中特有的lock - on效应的研究，提出了类似于耿畴(高场畴或偶极畴)的单极电荷畴理论模型，对光电导开关lock - on效应的各种现象给出了理论解释。 - When the applied bias voltage is changed within positive slope regions of u - i curve , the domain boundary between the high and low electric field domains does not moved , and the size of electric field domains regions is also not altered , while the electric field strengths are adjusted
用模拟计算的方法研究了弱耦合掺杂gaaa / alas超晶格在时变电压下的场畴机制和固定偏压下电流自维持振荡。在时变电压下，一定掺杂的超晶格处于稳定的电场畴， u - i曲线呈现锯齿状波形。 - Since the concept of superlattice was proposed , vertical transport in superlattice has been investigated widely . the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena . such kind of oscillation can be uesd to make tunable microwave oscillaors . in this thesis , low temperature transport problem , especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one . , the voltage - current characteristic and the current oscillation are simulated . the calculated result is nearly consistent with the experimental data
由超晶格中子能级之间的顺序多阱共振隧穿引起的电场畴及电流自维持振荡现象是其中的一个非常有意义的分支，该现象可用来制作电压调谐微波振荡器。本论文对弱耦合掺杂gaaa alas超晶格中的纵向输运特别是针对低温下的场畴的形成和固定偏压下电流自维持振荡产生的条件进行了深入的探讨，并结合宏观模型和微观模型对超晶格在时变电压作用下的电压-电流特性以及固定偏压作用下的电流特性进行了模拟计算。