场效应迁移率 meaning in English
field effect mobility
Examples
- The study shows that interface state charges not only increase the threshold voltage , but also lower the mosfet transconductance , drain current and field - effect mobility , which can well explain the results of experiment
分析结果显示界面态电荷不仅使阈值电压增大，而且还会导致器件漏电流减小，跨导和场效应迁移率降低，模拟结果能对实验现象做出很好的解释。 - The effect of interface state charges on the threshold voltage , drain current , transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution
建立界面态密度的指数分布模型，用数值方法较为详细的分析了界面态电荷对n沟mosfet器件阈值，漏电流，跨导和场效应迁移率的影响。 - It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet . and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明确指出碳化硅器件的反型层迁移率和实验测定的场效应迁移率不能等同，并给出了以上二者的比值与界面态密度的定量关系。 - We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation . in general , hydrogenation is prepared after completing of tft , in this way , we need more radio frequency power and time , so the cost of hydrogenation will raise
而通过氢化可以大大降低多晶硅薄膜晶粒边界中的悬挂键和界面陷阱,从而显著提高tft的场效应迁移率和开态电流,减少关态电流,提高tft的电学性能。