受激辐射阈值 meaning in English

stimulated radiation threshold

Compared to gan , which is one of the most successful wide - band semiconductor materials at present , zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno , 25mev for gan ) , which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile , homogeneous bulk zno is available
和gan相比， zno薄膜具有生长温度低，激子复合能高( zno ： 60mev ， gan ： 21 25mev ) ，受激辐射阈值较低，能量转换效率很高等优点。有可能实现室温下较强的紫外受激发射，制备出性能较好的探测器、发光二极管和激光二极管等光电子器件。