单晶生长技术 meaning in English
single crystal growth technique
Examples
- The microstructure of single - crystal nb - 18 . 7si ( at . % )
光学悬浮单晶生长技术制备的nb刁7st （ t - The foundation to develop nb - si system intermetallics base high temperature structure materials has also been established in some degree in this paper . arc melting , powder metallurgy and optical floating zone technology have been used and compared to fabricate the nb - si system intermetallics
运用电弧熔炼、粉末冶金热压烧结、粉末冶金冷等静压和光学悬浮单晶生长技术等方法制备了nb - si系金属间化合物，并对这四种方法制备的nb - si系金属间化合物进行了比较。 - The results indicate that arc melting is a good method to produce nb - si system intermetallics due to its simpler technics , lower cost and compact products . however , powder metallurgy is found to be not suitable to produce the nb - si system intermetallics due to its coarse and loose products resulting from the poor molding property of nb and si mixed powders . optical floating zone technology , which is used to fabricate nb - si intermetallic composites for the first time , is also found to be a good way to produce nb - si system intermetallics because of its compact products and good property despite of its relatively high cost
结果表明，电弧熔炼方法制备得到的nb - si系金属间化合物比较致密，且制备工艺简单，经济实用，是一种合适的nb - si系金属间化合物制备方法；由于nb 、 si元素粉末的成型性很差，用粉末冶金方法(热压烧结和冷等静压)制备的nb - si系金属间化合物表面粗糙、致密度低，且成本较高，不宜用于制备nb - si系金属间化合物；首次用光学悬浮单晶生长技术制备的nb - si系金属间化合物复合材料致密度很高，尽管成本稍高，但由于性能最佳，也是一种合适的nb - si系金属间化合物制备方法。 - The results reveal that the microstructure of the nb - si system intermetallics consists of nb and nbasi phases . because of unstable microstructure of nfysi phase at high temperature , the equilibrium nb + nbssia dual - phase microstructure of the nb - si system intermetallics should be acquired by means of heat - treatment
研究表明，采用电弧熔炼和单晶生长技术制备的nb - si系金属间化合物的显微组织主要由nb + nb _ 3si组成，而由于nb _ 3si相在高温下是不稳定的，为了得到稳定的nb + nb _ 5si _ 3双相组织，必须对材料进行热处理。 - With the development of the growth skill craft of gaas single crystal , the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too , so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material . so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon
随着单晶生长技术的发展，通过退火，由于si - gaas中理论化学配比偏离， el2浓度可被控制在1 1 . 5 10 ~ ( 16 ) cm ~ ( - 3 ) ，且分布均匀。因此碳的分布就成为决定si - gaas材料电阻率均匀性的一个关键因素。所以，研究碳微区均匀性就显得非常重要。