制造工艺流程 meaning in English
manufacturing process flow
Examples
- The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software . the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately . the maximum power density of 4h - sic mesfet is as high as 19 . 22w / mm . at the same time , the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed .
论文分析建立了4h - sicmosfet和mesfet器件的结构模型和物理模型，采用二维器件模拟软件medici对4h - sicmosfet和mesfet的输出特性进行了模拟分析，研究了温度和结构参数对器件特性的影响，表明两种器件的击穿特性均没有负阻现象，击穿电压分别达到85v和209v ，由此得到4h - sicmesfet最大功率密度可达到19 . 22w mm ；同时，研究了sic场效应晶体管的制作工艺，初步得到了一套制造sicmosfet器件的制造工艺流程，研制出了4h - sicmosfet器件。