击穿效应 meaning in English

breakdown effect
punch-through effect

Tddb evaluation experiments are carried out with constant current stress on mos capacitors with ultra - thin gate oxides , and a method of precise measurement and characterization of the trap density and accumulative failure is presented . this method is based on dynamic equilibrium equation of charge trapping
采用恒定电流应力对超薄栅氧化层mos电容进行了tddb评价实验，提出了精确测量和表征陷阱密度超薄栅氧化层经时击穿效应与可靠性仿真技术研究和累积失效率的方法。
At the same time , the burnout mechanism of junction devise and mos devise and some other devises under the high power microwave are discussed . the hpm action can come out through hot effect and the electricity effect , the semiconductor devise is burnout and invalidated , the hot effect raise the main function in the process
Hpm的作用可以通过热效应和电效应两种方式表现出来,半导体器件的毁伤过程中,热效应起主要作用。对于结型半导体、 mos等器件,主要的毁伤机理是二次击穿效应。再次,计算、讨论并分析了高功率微波孔洞耦合,以及gtem小室内的电磁场分布。