入射能 meaning in English
incident energy
Examples
- At the same translational energy , the cross - section increases with the rising of the rotational quantum number j , and declines with the rising of the quantum number m
在相同入射能的情况下，总散射截面随转动量子数j的增大而显著增大，随量子数m的增加而减小。 - The calculated results show that , for low energy protons ( energy less than several decade mev ) , the contribution of proton nuclear reaction to energy deposition can be neglected ; while for high energy protons ( energy greater than several hundred mev ) , the great difference appears for the above two cases . this gives us an indication that the contribution of proton nuclear reaction to the energy deposition must be concerned for high - energy protons . the propagation process in material of thermal shock wave induced by high - energy intense - current pulsed proton beam irradiation is calculated for several different proton energies
对于入射能注量为418 ( j cm ~ 2 )脉冲宽度为0 . 1 s的矩形脉冲强流质子束，计算结果表明，由于质子束能量不同，引起的初始热激波( 0 . 1 s时刻的热激波)有单峰结构，也有双峰结构，不同能量的强流质子束引起的热激波在传播的过程中都会出现明显的弹性前驱波。 - We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field . the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells . it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field . the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells . incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells . the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures
对磁量子结构中电子在外加恒定电场下的输运性质进行了研究.分别计算了电子隧穿相同磁垒磁阱和不同磁垒磁阱构成的两种磁量子结构的传输概率和电流密度.计算结果表明，在相当宽广的非共振电子入射能区，外加电场下电子的传输概率比无电场时增加.对于电子隧穿相同磁垒磁阱构成的双磁垒结构，共振减弱；对于电子隧穿不同磁垒磁阱构成的双磁垒结构，无电场作用时的非完全共振在适当的偏置电压下转化为完全共振，这时的电子可实现理想的共振隧穿.研究同时表明，磁量子结构中存在着显著的量子尺寸效应和负微分电导