位移效应 meaning in English

discomposition effect
displacement effect

The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically . the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps
在辐照的位移效应方面：从理论上对电子辐照在4h - sic中引入的缺陷数量和各种缺陷能级进行了计算和分析，其中只有eh6 / eh7缺陷能级在sic中起着有效的复合中心的作用。
The conclusion is that under the neutron and 7 - ray synthetical irradiation environment of a reactor , ionization effects of neutron on the vlsi made with cmos technology are weak , and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier , which causes the decrease of the total static current , so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and - ray
对试验结果综合分析得出：在反应堆的综合辐照环境下，中子电离效应较弱，并且由于中子位移效应引起载流子迁移率降低和载流子浓度降低，使得总的静态电流下降，从而抵消中子和射线综合电离导致的静态电流增长。