二次击穿 meaning in English
second breakdown
secondary breakdown
Examples
- Theoretical analysis indicates , the two technology helps reduce the concentration of current , lower the peak junction - temperature , and effectively avoid the appearance of devices " breakdown caused by heat and current
理论分析表明：上述两种技术，有利于减小电流集中现象，降低器件峰值结温，避免热击穿和二次击穿的发生。 - And the results of calculation and numerical simulation indicate , without increasing the intrinsic collector - junction area of power devices , collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter , improve heat - dissipating method of each cell of the chip , enhance the distribution uniformity of junction temperature and current of each cell of the chip , reduce the thermal resistance and raise the dissipation power pd and output power p0 , fairly well relax the contradiction among frequency , out - put power and dissipation power of the devices , and further improve the devices " property against second breakdown
而计算分析和二维数值模拟分析结果表明：梳状集电结(基区)结构在不增加器件本征集电结面积的条件下，增大了器件的本征散热面积和基区周长，改进了每个子器件单元内的散热方式，提高了单元内结温和电流分布的均匀性，降低了器件的热阻，增大了器件的耗散功率和输出功率，较好地缓解了目前传统结构中频率与功率、功耗的矛盾，并有利于改善器件抗二次击穿的性能。 - At the same time , the burnout mechanism of junction devise and mos devise and some other devises under the high power microwave are discussed . the hpm action can come out through hot effect and the electricity effect , the semiconductor devise is burnout and invalidated , the hot effect raise the main function in the process
Hpm的作用可以通过热效应和电效应两种方式表现出来,半导体器件的毁伤过程中,热效应起主要作用。对于结型半导体、 mos等器件,主要的毁伤机理是二次击穿效应。再次,计算、讨论并分析了高功率微波孔洞耦合,以及gtem小室内的电磁场分布。