不等时的 meaning in English

non-isochronous

In this experiment , thermal donor in cz silicon generated by 450 ? annealing for 32 hours was eliminated by rtf at range of 600 ~ 700 ? for different time . furthermore , the permit temperature and time for annihilation of thermal donor by rtf was found
实验中将450oc ， 32h处理生成热施主的普通cz硅片在600oc 700oc范围内进行不等时的rtp处理，观察电阻率的变化，从而确定最佳的rtp消除热施主温度和时间。
In the same way , the ncz silicon with nitrogen - oxygen complexes was annealed by rtf at range of 750 - 950 ? for different time to detect the change in resistivity . we found that nitrogen - oxygen complexes were annihilated with less time and lower temperature than conventional annealing method
同样，我们将650oc ， zh处理生成氮氧复合体的微氮硅片在750 950c范围内进行不等时的rtp处理，观察电阻率的变化，确定了最佳的氮氧复合体消除温度和时间。