vdmos meaning in English
垂直双扩散金属氧化物半导体结构
Examples
- Base on detailed analysis about physical mechanism of power vdmos , we present a macro - model which can accurately represent the characteristics of target power vdmos from - 50 ~ 125
此宏模型能在- 50 ~ 125范围内,准确的模拟功率vdmos的直流和动态特性。 - Major contents of this study are abstracted as following : 1 . analyze the dc , thermal and dynamic characteristics of power vdmos , and propose a new equivalent circuit
论文主要工作包括: 1 .详细研究了功率vdmos的直流特性、热特性和动态特性,提出一种新的等效电路结构。 - However , traditional mosfet models in hspice library are built for lateral mosfet with small power and they can ’ t represent the characteristics of power vdmos well
然而, hspice模型库中传统的mosfet模型都是根据横向结构的小功率mosfet工作机理建立的,无法准确模拟垂直结构的功率vdmos的各种特性。 - This thesis comes from a cooperating project which is to build spice simulation model for a latest power vdmos product of a well - known semiconductor company in the usa
论文来源于和美国某著名半导体公司合作的项目。本文在深入分析功率vdmos工作机理的基础上,为其公司最新推出的一款功率vdmos器件建立了hspice仿真宏模型。 - Power vdmos ( vertical double - diffusion mosfet ) is the most favorable device available for high speed , medium power applications because of its characteristics such as high input impedance , high power gain , easy to drive and good thermal stability
功率vdmos (垂直双扩散mosfet )以其高输入阻抗、高功率增益、驱动电路简单和热稳定性好等优点,在高速度和中等功率场合得到了广泛的应用。