heteroepitaxy meaning in English
异质外延
Examples
- By using theoretical calculation and rheed monitoring , the strain behavior in heteroepitaxy of ferroelectric oxides thin films was designed and controlled experimentally
通过理论预测和rheed的检测,控制氧化物薄膜生长,特别是控制铁电氧化物薄膜生长中的应变行为。 - This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy , which has the capability for improving device structure and characteristics
这种技术解决了外延生长难以解决的晶格失配问题，为改善器件结构及性能提供了巨大的潜力。 - The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example , batio _ 3 / srtio _ 3 with a lattice mismatch of 2 . 18 % ) , the growth mode of thin films is layer - by - layer , and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ) , the strain relaxation process can be explained by theory of coherent strained islands
氧化物薄膜异质外延应变行为的理论预测和解释。对于晶格失配较小的外延体系(如batio3 / srtio _ 3 2 . 18 % ) ,薄膜以层状方式进行生长,临界厚度和应变释放过程可以用经典的matthews - blakeslee公式进行预测;对于晶格失配较大的体系(如mgo / srtio _ 3 8 % ) ,薄膜以岛状方式进行生长,应变释放过程可以由弹性应变岛的理论体系进行解释。